Deconvolution of Thomson scattering temperature profiles.
Deconvolution of Thomson scattering temperature profiles.
复制标题
汤姆逊散射温度分布的反卷积。
DOI：
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发表时间：
2011
影响因子：
1.6
通讯作者：
T. Osborne
中科院分区：
文献类型：
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作者：
R. Scannell;M. Beurskens;P. Carolan;A. Kirk;M. Walsh;T. O’Gorman;T. Osborne
当电子温度 (T(e)) 或密度 (n(e)) 的梯度长度与仪器函数长度 (Δ(R)) 相当时，需要对汤姆逊散射 (TS) 轮廓进行反卷积。获得底层 T(e) 和 n(e) 分布的最正确的反卷积方法是考虑散射信号。然而，散射信号级别的反卷积很复杂，因为它需要了解所有光谱和绝对校准数据。本文提出了一种简单的技术，只需了解仪器函数 I(r) 和测量剖面 T(e，观测到)(r) 和 n(e，观测到)(r)，即可获得基础 T(e)(r) 和 n(e)(r)。该方法适用于大多数 TS 系统，并且在获得相对于 Δ(R) 的高空间采样时尤其重要。
Deconvolution of Thomson scattering (TS) profiles is required when the gradient length of the electron temperature (T(e)) or density (n(e)) are comparable to the instrument function length (Δ(R)). The most correct method for deconvolution to obtain underlying T(e) and n(e) profiles is by consideration of scattered signals. However, deconvolution at the scattered signal level is complex since it requires knowledge of all spectral and absolute calibration data. In this paper a simple technique is presented where only knowledge of the instrument function I(r) and the measured profiles, T(e, observed)(r) and n(e, observed)(r), are required to obtain underlying T(e)(r) and n(e)(r). This method is appropriate for most TS systems and is particularly important where high spatial sampling is obtained relative to Δ(R).