Radio-frequency point-contact electrometer
Radio-frequency point-contact electrometer
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DOI：
10.1063/1.2205159
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发表时间：
2006-05-15
影响因子：
4
通讯作者：
Williams, David A.
中科院分区：
文献类型：
--
作者：
Qin, Hua;Williams, David A.
我们制造并表征了一种类似于射频单电子晶体管(RF-SETS)的射频半导体点接触(RF-PC)静电计[参见Schoelkopf，Science 280,1238(1998)]。点接触是由AlGaAs/GaAs异质结中二维电子气中的表面肖特基栅极形成的。在目前的设置中，PC作为一个简单的压控电阻而不是量子点触点工作，在30 kHz的带宽下显示出大约2x10(-1)e/根赫兹的电荷灵敏度，而不使用低温射频前置放大器。由于典型的点接触器件的阻抗远低于典型器件的阻抗，因此，基于半导体的RF-PC，配上实用的低温射频前置放大器，可以实现超快、超灵敏的静电计。
We fabricate and characterize a radio-frequency semiconductor point-contact (rf-PC) electrometer analogous to radio-frequency single-electron transistors (rf-SETs) [see Schoelkopf , Science 280, 1238 (1998)]. The point contact is formed by surface Schottky gates in a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. In the present setup, the PC is operating as a simple voltage-controlled resistor rather than a quantum point contact and demonstrates a charge sensitivity of about 2x10(-1)e/root Hz at a bandwidth of 30 kHz without the use of a cryogenic rf preamplifier. Since the impedance of a typical point-contact device is much lower than the impedance of the typical SET, a semiconductor-based rf-PC, equipped with practical cryogenic rf preamplifiers, could realize an ultrafast and ultrasensitive electrometer.