Radiation tolerance of GaAs1-xSbx solar cells
Radiation tolerance of GaAs1-xSbx solar cells
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DOI：
10.1016/j.solmat.2021.111352
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发表时间：
2021-12
影响因子：
6.9
通讯作者：
H. Afshari;B. Durant;Tristan Thrasher;Logan Abshire;V. R. Whiteside;Shun Chan;Dongyoung Kim;S. Hatch;M. Tang;J. Mcnatt;Huiyun Liu;M. McCartney;David J. Smith;I. Sellers
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文献类型：
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作者：
H. Afshari;B. Durant;Tristan Thrasher;Logan Abshire;V. R. Whiteside;Shun Chan;Dongyoung Kim;S. Hatch;M. Tang;J. Mcnatt;Huiyun Liu;M. McCartney;David J. Smith;I. Sellers
高辐射耐受性的GaAs 1-xSbx基太阳能电池的低强度，低温（LILT）条件下的目标行星土星，木星和火星。GaAs 1-xSbx基电池用高能电子辐照，以评估恶劣的辐射环境对太阳能电池的影响，然后在其光伏操作方面研究电池的响应。这个系统显示出显着的辐射阻力的高能电子环境的条件下的行星的利益。在低温下观察到照射后短路电流的异常增加，这是由在相同条件下电池的外量子效率的同时增加所支持的。电池的开路电压和填充因子特别耐受辐照，这也反映在太阳能电池在辐照时（特别是在LILT下）未改变的暗电流-电压特性中。
High radiation tolerance of GaAs1-xSbxbased solar cells is demonstrated for the low-intensity-low-temperature (LILT) conditions of the target planets Saturn, Jupiter, and Mars. The GaAs1-xSbx-based cells are irradiated with high energy electrons to assess the effect of harsh radiation environment on the solar cell and the response of the cell is then investigated in terms of its photovoltaic operation. This system shows significant radiation resistance to the high energy electron environment for the conditions of the planets of interest. An unusual increase of the short circuit current after irradiation is observed at low temperature, which is supported by a simultaneous increase in the external quantum efficiency of the cell under the same conditions. The open circuit voltage and fill factor of the cell are especially tolerant to irradiation, which is also reflected in unchanged dark current-voltage characteristics of the solar cell upon irradiation particularly at LILT.