Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition
Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition
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通过在非晶硅沉积之前氢化栅极氮化物来减少非晶硅薄膜晶体管的阈值电压漂移
DOI：
10.1063/1.120435
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发表时间：
1997
影响因子：
4
通讯作者：
H. Tuan
中科院分区：
文献类型：
--
作者：
J. Tsai;Chun‐Yao Huang;Y. Tai;Huang;F. Su;F. Luo;H. Tuan
在沉积非晶硅（a-Si：H）之前对栅极SiNx进行短的H2等离子体处理被发现显著降低了偏置应力、倒置a-Si：H薄膜晶体管（TFT）中的阈值漂移。降低的阈值电压偏移归因于等离子体诱导的SiNx前体的重建，导致去除弱键。然而，长时间的等离子体处理，降低了TFT的特性，这是跟踪H2等离子体损伤，最终产生了粗糙的a-Si：H/SiNx界面。
A short H2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H2 plasma damage which eventually generated a rough a-Si:H/SiNx interface.