Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash
Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash
复制标题
DOI：
10.1016/j.sse.2020.107930
复制
发表时间：
2021-01-24
影响因子：
1.7
通讯作者：
Baek, Rock-Hyun
中科院分区：
文献类型：
--
作者：
Nam, Kihoon;Park, Chanyang;Baek, Rock-Hyun
为了提高3D NAND闪存的编程效率，我们利用测量和模拟数据分析了增量阶跃脉冲编程(ISPP)的斜率退化。用测量数据对仿真数据进行了标定，两者吻合较好。ISPP斜率表示程序效率，其理想值为1。然而，在现实中，ISPP斜率退化(
We analyzed Incremental Step Pulse Programming (ISPP) slope degradation to improve the program efficiency of 3D NAND Flash memory using both measurement and simulation data. The simulation data are calibrated with the measurement data and they are in good agreement. The ISPP slope indicates program efficiency and its ideal value is 1. In reality, however, ISPP slope degradation (