Characteristics of thin‐film spiral antenna‐coupled Bi microbolometer fabricated on Si3N4/SiO2 membrane
Characteristics of thin‐film spiral antenna‐coupled Bi microbolometer fabricated on Si3N4/SiO2 membrane
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Si3N4/SiO2膜上薄膜螺旋天线耦合Bi微测辐射热计的特性
DOI：
10.1002/tee.22641
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发表时间：
2018
影响因子：
1
通讯作者：
T. Tachiki
中科院分区：
文献类型：
--
作者：
T. Uchida;A. Matsushita;T. Tachiki
在Si 3 N4/SiO2膜上制作了薄膜螺旋天线耦合Bi微测辐射热计。通过使用26wt%KOH溶液从Si衬底的背面进行湿法蚀刻来实现膜。天线是根据当前的频带理论设计的，因此它覆盖140-220 GHz的频率范围。位于膜上的天线和由铜板反射器支撑的膜上的天线的实验图案与位于空气中的天线的理论图案良好一致。此外，还得到了天线在140 ~ 220 GHz范围内的宽带特性。在220 GHz电磁波的照射下，由直流灵敏度估计的膜上的Bi微测辐射热计的响应度为110 V/W。该值比在电介质衬底上制造的Bi测辐射热计的值高约一个数量级。© 2018日本电气工程师协会。出版社：John Wiley & Sons，Inc.
A thin‐film spiral antenna‐coupled Bi microbolometer was fabricated on a Si3N4/SiO2 membrane. The membrane was realized by wet etching from the back of an Si substrate using a 26 wt% KOH solution. The antenna was designed in accordance with the current band theory so that it covers the frequency range of 140–220 GHz. The experimental patterns for antennas located on the membrane and on the membrane backed by a copper plate reflector were in good agreement with theoretical patterns for the antenna located in air. Furthermore, a wide band characteristic of the antenna ranging from 140 to 220 GHz was obtained. The responsivity of the Bi microbolometer on the membrane estimated from the DC sensitivity under the irradiation of 220 GHz electromagnetic wave was 110 V/W. This value is about one order of magnitude higher than that of a Bi bolometer fabricated on a dielectric substrate. © 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
影响因子：
4
作者：
A. K. Huhn;G. Spickermann;A. Ihring;U. Schinkel;H. Meyer;P. Bolívar
通讯作者：
A. K. Huhn;G. Spickermann;A. Ihring;U. Schinkel;H. Meyer;P. Bolívar