Hall Effect in Bulk-Doped Organic Single Crystals
Hall Effect in Bulk-Doped Organic Single Crystals
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DOI：
10.1002/adma.201605619
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发表时间：
2017-06-20
影响因子：
29.4
通讯作者：
Hiramoto, Masahiro
中科院分区：
文献类型：
--
作者：
Ohashi, Chika;Izawa, Seiichiro;Hiramoto, Masahiro
分别同时测定掺杂无机单晶单位体积载流子浓度（N, cm(-3)）和迁移率（mu）的标准技术是测量霍尔效应。然而，该技术尚未被报道用于块体掺杂有机单晶。本文测量了块状掺杂单晶有机半导体中的霍尔效应。这项工作的一个关键特点是超低共沉积技术，低至10(-9)nm s(-1)，使我们能够在极低浓度的1ppm下掺杂具有受体的同外延有机单晶。系统地观察了具有带状性质的块体掺杂rubrene单晶的单位体积空穴浓度（N, cm(-3)）和霍尔迁移率（mu(H)）。发现这些rubrene单晶具有(i)高电离率和（ii）由于晶格扰动而产生的散射效应，这是这种有机单晶所特有的。
The standard technique to separately and simultaneously determine the carrier concentration per unit volume (N, cm(-3)) and the mobility (mu) of doped inorganic single crystals is to measure the Hall effect. However, this technique has not been reported for bulk-doped organic single crystals. Here, the Hall effect in bulk-doped single-crystal organic semiconductors is measured. A key feature of this work is the ultraslow co-deposition technique, which reaches as low as 10(-9) nm s(-1) and enables us to dope homoepitaxial organic single crystals with acceptors at extremely low concentrations of 1 ppm. Both the hole concentration per unit volume (N, cm(-3)) and the Hall mobility (mu(H)) of bulk-doped rubrene single crystals, which have a band-like nature, are systematically observed. It is found that these rubrene single crystals have (i) a high ionization rate and (ii) scattering effects because of lattice disturbances, which are peculiar to this organic single crystal.