Effects of spectrum on the power rating of amorphous silicon photovoltaic devices
Effects of spectrum on the power rating of amorphous silicon photovoltaic devices
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DOI：
10.1002/pip.1080
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发表时间：
2011-09
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影响因子：
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通讯作者：
C. Monokroussos;M. Bliss;Y.N. Qiu;C. Hibberd;T. Betts;A. Tiwari;R. Gottschalg
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文献类型：
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作者：
C. Monokroussos;M. Bliss;Y.N. Qiu;C. Hibberd;T. Betts;A. Tiwari;R. Gottschalg
利用专门为此开发的光电模型，研究了不同光谱对基于实验室的非晶硅太阳电池性能评估的影响。其目的是量化校准过程中的不确定因素。两个主要的不确定因素来自于测试光谱和标准光谱的差异。首先，参考单元和被测器件之间的失配，在非晶硅器件的情况下，这被证明是电压相关的。其次，器件的填充因子受不同光谱的影响。在这项工作中，研究了不同光源的不同电池结构和状态(特别是不同的I层厚度和退化程度)。这些光源是不同的太阳模拟器、LED光源、钨光源以及标准的地面AM1.5G辐射。结果表明，不能仅用短路电流来评价其性能。P-i-n器件的电压相关量子效率可以导致250 nm I层器件在制备时的PMPP失配为1%，而对于600 nm退化状态的I层器件，PMPP失配最高可达4%。版权所有©2011 John Wiley&Sons，Ltd.
The effects of different spectra on the laboratory based performance evaluation of amorphous silicon solar cells is investigated using an opto‐electrical model which was developed specifically for this purpose. The aim is to quantify uncertainties in the calibration process. Two main uncertainties arise from the differences in the test spectrum and the standard spectrum. First, the mismatch between reference cells and the measured device, which is shown to be voltage dependent in the case of amorphous silicon devices. Second, the fill factor of the device is affected by different spectra. Different cell structures and states (specifically different i‐layer thickness and levels of degradation) for the different light sources are investigated in this work. These sources are different solar simulators, LED sources, Tungsten as well as the standard terrestrial AM1.5G radiation. It is shown that the performance cannot be evaluated by short circuit current alone. The voltage dependent quantum efficiency of p‐i‐n devices can introduce a mismatch in the PMPP of 1% for 250 nm i‐layer devices in as prepared state, rising to up to 4% for the 600 nm i‐layer devices at degraded state. Copyright © 2011 John Wiley & Sons, Ltd.