Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology
Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology
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DOI：
10.1016/j.electacta.2011.02.078
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发表时间：
2011-07
影响因子：
6.6
通讯作者：
F. Inoue;Tomohiro Shimizu;T. Yokoyama;H. Miyake;K. Kondo;Takeyasu Saito;Taro Hayashi;Shukichi Tanaka;T. Terui;S. Shingubara
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文献类型：
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作者：
F. Inoue;Tomohiro Shimizu;T. Yokoyama;H. Miyake;K. Kondo;Takeyasu Saito;Taro Hayashi;Shukichi Tanaka;T. Terui;S. Shingubara
使用势垒层和铜种子层的无电沉积来实现全湿法工艺，以制造高深宽比硅通孔 (TSV)。使用紧密吸附在 TSV 侧壁的 SiO2 上的金纳米颗粒 (AuNP) 催化剂可以形成 Ni-B、Co-B 和 Co-W-B 的薄阻挡金属层。 3-氨基丙基三乙氧基硅烷的硅烷偶联剂对于提高AuNP的吸附密度是有效的。在不使用催化剂的情况下，通过置换电镀将共形化学镀铜层沉积在阻挡层上。通过 300°C 退火，化学镀阻挡层和 SiO2 基板之间的粘合强度得到提高。这些结果强烈表明，用于形成具有高深宽比的铜填充 TSV 的全湿法实际上是可能的。
An all-wet process was achieved using electroless deposition of barrier and Cu seed layers for fabrication of a high aspect ratio through-Si via (TSV). Formation of a thin barrier metal layer of Ni–B, Co–B and Co–W–B is possible using a Au nanoparticle (AuNP) catalyst, which is densely adsorbed on the SiO2of the TSV sidewall. A silane coupling agent of 3-aminopropyl-triethoxysilane is effective for enhancement of the density of adsorption for AuNP. A conformal electroless Cu layer is deposited on the barrier layer by displacement plating without a catalyst. The adhesion strength between the electroless barrier layer and the SiO2substrate is increased by annealing at 300 °C. These results strongly suggest that an all-wet process for the formation of Cu-filled TSV with a high aspect ratio is practically possible.