Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B,Ga,In)As
Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B,Ga,In)As
复制标题
局域硼杂质对(B,Ga,In)As光调制反射光谱中基本带隙跃迁线形的影响
DOI：
10.1103/physrevb.83.235213
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发表时间：
2011
影响因子：
3.7
通讯作者：
E. O’Reilly
中科院分区：
文献类型：
--
作者：
T. Sander;J. Teubert;P. Klar;A. Lindsay;E. O’Reilly
