Measurements of the Spectral and Directional Emission From Microgrooved Silicon Surfaces
Measurements of the Spectral and Directional Emission From Microgrooved Silicon Surfaces
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微槽硅表面的光谱和定向发射的测量
DOI：
10.1115/1.3250545
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发表时间：
1988
影响因子：
--
通讯作者：
J. Zemel
中科院分区：
文献类型：
--
作者：
P. Hesketh;B. Gebhart;J. Zemel
本文报道了在300℃和400℃下测量硅衬底上非常规则的微结构凹槽表面的光谱和镜面热辐射发射特性。得到的表面是掺磷的，以确保样品表面附近材料的发射占主导地位。样品的参考凹槽深度H为零，为42{u}m，或每厘米455个凹槽。凹槽的大小直接对应于在这些温度水平下产生的主要发射波长的频带。测量表明，正常发射的光谱效应很强，包括H>；{lambda}的非常有利的频率。这表明了一种腔器官管的发射模式。类似的，通过修改，在定向发射中也发现了影响，远离正常。此外，还存在强偏振效应，以交叉槽偏振模式为主。
This paper reports measurements of both the spectral and specular thermal radiation emission characteristics of very regularly microconfigured grooved surfaes in silicon substrate at 300 and 400C. The resulting surfaces were phosphorous-doped, to assure the dominance of the emission from the material near the sample surface. The samples had groove depths H of zero for a reference, to 42 {mu}m, or 455 grooves grooves per cm. The grooves correspond directly in size to the band of principle emission wavelengths {lambda} that arises at these temperature levels. The measurements show strong spectral effects for normal emission, including highly favored frequencies, fro H > {lambda}. This suggests a cavity organ pipe mode of emission. Similar, through modified, effects were found in directional emission, away from the normal. There also were stron polarization effects, wtih the cross-groove polarization mode dominant.