A facile approach for quantifying the density of defects (edge plane sites) of carbon nanomaterials and related structures
A facile approach for quantifying the density of defects (edge plane sites) of carbon nanomaterials and related structures
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DOI：
10.1039/c0cp01562h
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发表时间：
2011-01-01
影响因子：
3.3
通讯作者：
Banks, Craig E.
中科院分区：
文献类型：
--
作者：
Hallam, Philip M.;Banks, Craig E.
提出了一种简便的基于循环伏安法的方法，使得碳纳米材料的缺陷密度，即边缘平面类位置/缺陷很容易被量化。该方法是基于碳纳米材料糊电极的构建，用循环伏安法和标准的电化学氧化还原探针进行了测量。该方案允许容易地确定非均相电子转移速率和缺陷密度之间的定量关系，并且还为研究人员提供了一种用于比较目的的量化缺陷密度的方法。
A facile methodology based on cyclic voltammetry is presented allowing the density of defects, viz edge plane like-sites/defects of carbon nanomaterials to be readily quantified. The approach is based on the construction of carbon nanomaterial paste electrodes which is measured using cyclic voltammetry and a standard electrochemical redox probe. This protocol allows a quantitative relationship between the heterogeneous electron-transfer rate and the density of defects to be readily determined and also provides researchers with a methodology to quantify the density of defects for comparative purposes.