Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current
Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current
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DOI：
10.1109/tpel.2023.3268673
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发表时间：
2023-07
影响因子：
6.7
通讯作者：
K. Hasegawa;Kai Takagi
中科院分区：
文献类型：
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作者：
K. Hasegawa;Kai Takagi
这封信揭示了PIN二极管的反向恢复电流对逆变器中绝缘栅双极晶体管（IGBT）的浪涌和栅极噪声电压的影响。理论分析表明，$di/dt$的反向恢复电流，IGBT的开关速度，和寄生电感影响栅极噪声电压不像肖特基势垒二极管，因为谐振不会发生由于结电容。分析还表明，即使在低直流电压区域中出现大量浪涌电压，当直流电压增加时也可能不会出现浪涌电压。利用1.7 kV 260 A IGBT模块设计并搭建了1 kV测试装置，验证了理论分析的正确性。
This letter reveals the effect of the reverse-recovery current of a PIN diode on the surge and gate-noise voltages of an insulated-gate bipolar transistor (IGBT) in an inverter. Theoretical analysis reveals that the $di/dt$ of the reverse-recovery current, the switching speed of the IGBT, and parasitic inductances affect the gate-noise voltage unlike a Schottky barrier diode because resonance does not occur due to junction capacitances. The analysis also indicates that the surge voltage may not occur when the dc voltage is increased even though a large amount of surge voltage occurs in a low dc voltage region. A 1-kV testing setup was designed and constructed using a 1.7-kV 260-A IGBT module, which confirms the validity of the theoretical analysis.