On the origin of the 265 nm absorption band in AlN bulk crystals
On the origin of the 265 nm absorption band in AlN bulk crystals
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DOI：
10.1063/1.4717623
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发表时间：
2012-05
影响因子：
4
通讯作者：
R. Collazo;Jinqiao Xie;Benjamin E. Gaddy;Z. Bryan;R. Kirste;M. Hoffmann;R. Dalmau;B. Moody;Y. Kumagai;Toru Nagashima;Y. Kubota;T. Kinoshita;A. Koukitu;D. Irving;Z. Sitar
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文献类型：
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作者：
R. Collazo;Jinqiao Xie;Benjamin E. Gaddy;Z. Bryan;R. Kirste;M. Hoffmann;R. Dalmau;B. Moody;Y. Kumagai;Toru Nagashima;Y. Kubota;T. Kinoshita;A. Koukitu;D. Irving;Z. Sitar
单晶AlN为富Al AlGaN提供了原生衬底，这是开发高效深紫外发光二极管和激光二极管所需的。在这些衬底中观察到以4.7 eV（约265 nm）为中心的吸收带，其吸收系数高于1000 cm-1。基于密度泛函理论计算，氮位点上的取代碳在该能量下引入吸收。一系列的单晶晶片被用来证明，这种吸收带线性增加与碳，强烈支持的模型，CN-是碳在AlN的主要状态。
Single crystal AlN provides a native substrate for Al-rich AlGaN that is needed for the development of efficient deep ultraviolet light emitting and laser diodes. An absorption band centered around 4.7 eV (∼265 nm) with an absorption coefficient above 1000 cm−1 is observed in these substrates. Based on density functional theory calculations, substitutional carbon on the nitrogen site introduces absorption at this energy. A series of single crystalline wafers were used to demonstrate that this absorption band linearly increased with carbon, strongly supporting the model that CN- is the predominant state for carbon in AlN.