Leakage mechanisms of double-perovskite Bi2FeMnO6 epitaxial thin films
Leakage mechanisms of double-perovskite Bi2FeMnO6 epitaxial thin films
复制标题
双钙钛矿Bi2FeMnO6外延薄膜的漏电机制
DOI：
10.1088/1361-6463/aaa0ec
复制
发表时间：
2018-01-31
影响因子：
3.4
通讯作者：
Chu, Junhao
中科院分区：
文献类型：
--
作者：
Shen, Peng;Guan, Zhao;Chu, Junhao
Multiferroic Bi 2 FeMnO 6 epitaxial thin films were deposited on conductive SrRuO 3/SrTiO 3 (0 0 1) substrate by pulse laser deposition. The Au/Bi 2 FeMnO 6/SrRuO 3 capacitor structure was used to investigate the electrical property. Bi 2 FeMnO 6 thin film has a good ferroelectric retention and the downward polarization state. For Bi 2 FeMnO 6 film, different leakage mechanisms play a predominant role under different electric field regions. Ohmic conduction works under 80 kV cm− 1. From 80 to 1350 kV cm− 1, the leakage mechanism depends on the electric field polarity and Poole–Frenkel emission is the dominant mechanism at negative bias. Schottky emission dominates the leakage current above 1350 kV cm− 1. The extracted zero-field ionization energy for Poole–Frenkel emission is~ 0.4 eV. A schematic energy band alignment of Au/Bi 2 FeMnO 6/SrRuO 3 capacitor was constructed to describe the contribution of Schottky emission.
