Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted
Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted
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DOI：
10.1063/1.1874294
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发表时间：
2005-04
影响因子：
3.2
通讯作者：
A. Chatterjee;peixiong zhao;S. Pendharkar;K. Banerjee
中科院分区：
文献类型：
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作者：
A. Chatterjee;peixiong zhao;S. Pendharkar;K. Banerjee
本文讨论了在基极发射极短路的双极结型晶体管 (BJT) 中通常观察到的反向偏置 I-V 特性的两种不同击穿模式，在存在大位移电流时表现出不稳定的行为。介绍了与 BJT 反向偏置集电极结相关的实验观察结果，当施加快速电压斜坡时，BJT 表现出两种不同的击穿状态。 p∕n−∕n+ 结构中雪崩注入瞬态行为的数值模拟表明，两种非常接近的击穿状态共存。讨论了导致第二次击穿不稳定行为的机制。击穿的抖动性质归因于与 n−∕n+ 结上的电场累积相关的延迟。
This paper discusses two different modes of breakdown in the reverse-biased I–V characteristics observed generically in bipolar junction transistors (BJTs) with the base emitter shorted, showing an erratic behavior, in the presence of large displacement currents. Experimental observations related to reverse-biased collector junctions of BJTs, that exhibit two different states of breakdown when a fast voltage ramp is applied are presented. Numerical simulations of the transient behavior of avalanche injection in p∕n−∕n+ structures show that two very close breakdown states coexist. The mechanisms leading to the erratic behavior of the second breakdown are discussed. The jittery nature of the breakdown is attributed to the delay associated with the buildup of the electric field across the n−∕n+ junction.