Ionisation and recombination rates in argon plasmas
Ionisation and recombination rates in argon plasmas
复制标题
氩等离子体中的电离率和复合率
DOI：
10.1088/0022-3727/23/9/005
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
S. W. Simpson
中科院分区：
文献类型：
--
作者：
S. W. Simpson
本文提出了一个处理惰性气体等离子体中多步电离和复合的近似模型。该模型具体利用了惰性气体的典型电子能级结构，在基态和第一激发态之间具有大的能隙，随后是相对紧密间隔的能级。在氩气中的电离和复合率公式推导出可以快速评估。该方法是有用的惰性气体等离子体中的辐射效应是次要的重要性或可忽略不计。
An approximate model for treating multistep ionisation and recombination in inert gas plasmas is presented. The model makes specific use of the typical electronic level structure of inert gases with a large energy gap between the ground state and first excited state, followed by levels which are relatively closely spaced. Formulae for ionisation and recombination rates in argon are derived which can be rapidly evaluated. The method is useful for inert gas plasmas in which radiation effects are secondary in importance or negligible.