CoFeB/MgO-based magnetic tunnel junction directly formed on a flexible substrate
CoFeB/MgO-based magnetic tunnel junction directly formed on a flexible substrate
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DOI：
10.7567/1882-0786/ab0dca
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发表时间：
2019-05-01
影响因子：
2.3
通讯作者：
Chiba, Daichi
中科院分区：
文献类型：
--
作者：
Ota, Shinya;Ono, Masaki;Chiba, Daichi
我们成功地在有机柔性衬底上直接制备了CoFeB/MgO基磁性隧道结（MTJ）。MTJ显示出良好的应变耐力，同时保持隧道磁阻（TMR）的比率类似于100%，在各种应变条件下，TMR比率几乎不变的拉伸应变为1.2%。由于磁致弹性效应，顶部和底部CoFeB层的磁各向异性场与应变成线性比例，其速率几乎与单个CoFeB膜中的速率相同，这表明预期的应变从拉伸的柔性基板添加到MTJ柱中的两个CoFeB层上。(c)2019日本应用物理学会
We succeeded in fabricating a CoFeB/MgO-based magnetic tunnel junction (MTJ) directly on an organic flexible substrate. The MTJ shows good strain endurance while keeping the tunnel magnetoresistance (TMR) ratio of similar to 100% under various strained conditions; the TMR ratio is almost unchanged up to a tensile strain of 1.2%. Because of the magnetoelastic effect, the magnetic anisotropy fields for the top and bottom CoFeB layers are linearly proportional to strain with almost the same rate as that in a single CoFeB film, suggesting that the expected strain is added on both CoFeB layers in the MTJ pillar from the stretched flexible substrate. (c) 2019 The Japan Society of Applied Physics