Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon
Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon
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DOI：
10.1063/1.1407845
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发表时间：
2001-10
影响因子：
3.2
通讯作者：
L. Balagurov;S. Bayliss;V. S. Kasatochkin;E. A. Petrova;B. Unal;D. Yarkin
中科院分区：
文献类型：
--
作者：
L. Balagurov;S. Bayliss;V. S. Kasatochkin;E. A. Petrova;B. Unal;D. Yarkin
在不同温度下对氧化金属/多孔硅（PS）/c-Si三明治结构进行了电流-电压（I-V）和阻抗测量。发现在相对小的偏压下的I-V依赖性由PS层的电阻决定。当反向偏压增加时，载流子的注入开始。在高正向偏压下，观察到I-V关系中的幂律空间电荷限制电流。从这些计算的指数能量分布的局域态的特征能量为60毫电子伏。在与PS层相邻的p型c-Si衬底中建立了具有高导电性的反型（n型）层的存在。该反型层的存在导致有源器件面积、电容和反向电流的增加。
Current–voltage (I–V) and impedance measurements of oxidized metal/porous silicon (PS)/c-Si sandwich structures were performed at various temperatures. The I–V dependence at relatively small bias was found to be determined by the resistance of the PS layer. When the reverse bias is increased the injection of carriers commences. A power-law space charge limited current in the I–V dependence was observed at high forward bias. An exponential energy distribution of localized states with a characteristic energy of 60 meV was calculated from these. The existence of an inversion (n-type) layer with high conductivity was established in the p-type c-Si substrate adjacent to the PS layer. The presence of this inversion layer leads to an increase of the active device area, capacitance, and reverse current.