Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs
Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs
复制标题
取向、几何形状和应变对硅环栅 (GAA) MOSFET 中电子分布的影响
DOI：
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发表时间：
2011
影响因子：
3.1
通讯作者：
F. Gámiz
中科院分区：
文献类型：
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作者：
I. M. Tienda;F. Ruiz;A. Godoy;B. Biel;F. Gámiz
本文深入研究了器件取向、几何形状和应变(单轴和双轴)对不同硅栅通用型金属氧化物半导体场效应晶体管静电特性的影响。我们展示了电子密度如何随器件取向变化，以及它如何依赖于几何形状、尺寸和应变。虽然阈值电压弱依赖于取向，但我们发现它强烈地受几何、应变和尺寸的影响。此外，还研究了各向同性有效质量模型对圆柱形装置的适用性。我们证明了该模型不能模拟用非各向同性模型得到的电子密度。然而，如果选择适当的各向同性有效质量值，则可以重现阈值电压的行为。
In this paper, the effects of device orientation, geometry, and strain (uniaxial and biaxial) on the electrostatic properties of different silicon gate-all-around metal-oxide-semiconductor field-effect transistors are thoroughly investigated. We show how the electron density changes with the device orientation and how it depends on the geometry, size, and strain. Although the threshold voltage is weakly dependent on the orientation, we show that it is strongly affected by the geometry, strain, and size. In addition, the suitability of the isotropic effective mass model is investigated for cylindrical devices. We prove that this model is not able to mimic electron density obtained with a nonisotropic model. However, if an appropriate isotropic effective mass value is selected, the behavior of the threshold voltage can be reproduced.