Sputter deposition of Al-doped ZnO films with various incident angles

Sputter deposition of Al-doped ZnO films with various incident angles
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DOI:
10.1116/1.3186618
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发表时间:
2009-07
期刊:
Journal of Vacuum Science and Technology
影响因子:
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通讯作者:
Y. Sato;K. Yanagisawa;Nobuto Oka;Shin‐ichi Nakamura;Y. Shigesato
Y. Sato;K. Yanagisawa;Nobuto Oka;Shin‐ichi Nakamura;Y. Shigesato
中科院分区:
其他
文献类型:
--
作者:
Y. Sato;K. Yanagisawa;Nobuto Oka;Shin‐ichi Nakamura;Y. Shigesato

文献摘要

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在200 °C下加热的玻璃衬底上溅射沉积Al掺杂的ZnO(AZO)薄膜,溅射粒子的入射角为0°(垂直于衬底的入射角)、20°、40°、60°和80°。在垂直入射的情况下,X射线衍射极图显示出垂直于膜表面的强[001]择优取向。相反,在入射角高于60°的情况下,[001]取向朝向溅射粒子的方向倾斜25°-35°。透射电子显微镜显示,[001]取向的倾斜角随着入射溅射粒子的角度的增加而增加,而柱状结构相对于衬底平面没有显示出任何倾斜的迹象。
Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 °C under incident angles of sputtered particles at 0° (incidence normal to substrate), 20°, 40°, 60°, and 80°. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60°, the [001] orientation inclined by 25°–35° toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.