Sputter deposition of Al-doped ZnO films with various incident angles
Sputter deposition of Al-doped ZnO films with various incident angles
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DOI:
10.1116/1.3186618
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发表时间:
2009-07
期刊:
影响因子:
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通讯作者:
Y. Sato;K. Yanagisawa;Nobuto Oka;Shin‐ichi Nakamura;Y. Shigesato
中科院分区:
文献类型:
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作者:
Y. Sato;K. Yanagisawa;Nobuto Oka;Shin‐ichi Nakamura;Y. Shigesato
Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 °C under incident angles of sputtered particles at 0° (incidence normal to substrate), 20°, 40°, 60°, and 80°. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60°, the [001] orientation inclined by 25°–35° toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.