Theory of dislocation loops in multilayered anisotropic solids with magneto-electro-elastic couplings
Theory of dislocation loops in multilayered anisotropic solids with magneto-electro-elastic couplings
复制标题
具有磁电弹性耦合的多层各向异性固体中的位错环理论
DOI：
10.1016/j.jmps.2019.01.005
复制
发表时间：
2019-04
影响因子：
5.3
通讯作者：
Kang Guozheng
中科院分区：
文献类型：
--
作者：
Yuan Jianghong;Huang Yin;Chen Weiqiu;Pang Ernian;Kang Guozheng
本文提出了一个关于具有电磁弹性耦合的多层各向异性固体中位错环的一般理论。首先，一个新的扩展点力绿色的功能，不仅保证了数值稳定性，但也承认在多层固体的图像方法的直接解释。然后，基于新的绿色函数，通过考虑表面/界面条件和磁电弹耦合，系统地推广了纯弹性无限固体中位错环的经典理论。本文的主要贡献有两点：（1）导出了任意位错环诱导的扩展位移场和应力场，并将其简洁地表示为沿着位错闭合曲线的简单线积分;（2）导出了任意位错环间的相互作用能，并将其简洁地表示为沿着位错闭合曲线的双线积分。基于新的多层固体线积分表达式，对直线位错段和椭圆位错环等特殊结构进行了详细的解析研究，并通过简单的约化得到了双材料和半无限固体中位错环的线积分表达式.文中所推导的公式与现有文献中的解进行了比较，充分验证了公式的正确性。作为新的应用，本理论被用来有效地计算界面椭圆型位错环的自能，这清楚地表明表面/界面条件和多场耦合对界面位错环的自能有相当大的影响。本文提出的位错环线积分公式不仅丰富了磁电弹性理论，而且在多层薄膜结构的三维离散位错动力学模拟中具有潜在的应用价值。
This article presents a general theory on dislocation loops in multilayered anisotropic solids with magneto-electro-elastic couplings. First, a novel extended point-force Green's function is developed that not only guarantees the numerical stability but also admits a direct interpretation of the image method in multilayered solids. Then, based on the new Green's function, the classical theory of dislocation loops in pure-elastic infinite solids is systematically generalized by accounting for both the surface/interface conditions and the magneto-electro-elastic couplings. Two major contributions are made in the generalization: (i) the extended displacement and stress fields induced by an arbitrary dislocation loop are derived and expressed concisely as a simple line integral along the closed dislocation curve; (ii) the interaction energy between two arbitrary dislocation loops is also derived and expressed compactly as double line integrals along the two closed dislocation curves. Based on the new line-integral expressions for multilayered solids, special configurations such as straight dislocation segments and elliptic dislocation loops are analytically studied in detail; and more strikingly, elegant line-integral expressions for dislocation loops in bi-materials or in a semi-infinite solid are obtained by simple reduction. All the expressions derived in this article are compared with available solutions in existing literature and the correctness of them is fully verified. As novel applications, the present theory is utilized to calculate the self-energy of interfacial elliptic dislocation loops efficiently, which clearly shows that both the surface/interface conditions and the multi-field couplings have a considerable influence on the self-energy of interfacial dislocation loops. The line-integral based formulae developed here for dislocation-loop problems will not only enrich the theory of magneto-electro-elasticity, but also have potential applications in three-dimensional discrete dislocation dynamics simulations associated with multilayered thin-film structures.
登录
查看更多内容
DOI：
10.1016/j.ijplas.2017.10.003
发表时间：
2017-06
期刊：
arXiv: Materials Science
影响因子：
--
作者：
G. Po;M. Lazar;N. Admal;N. Ghoniem
通讯作者：
G. Po;M. Lazar;N. Admal;N. Ghoniem
影响因子：
1.6
作者：
M. Lazar;H. Kirchner
通讯作者：
M. Lazar;H. Kirchner
影响因子：
5.3
作者：
Yanfei Gao;B. Larson
通讯作者：
Yanfei Gao;B. Larson
影响因子：
5.3
作者：
Wenwang Wu;C. Lv;Jinhuan Zhang
通讯作者：
Wenwang Wu;C. Lv;Jinhuan Zhang
DOI：
10.1007/s00033-002-8184-1
发表时间：
2002-09
期刊：
Zeitschrift für angewandte Mathematik und Physik ZAMP
影响因子：
--
作者：
E. Pan
通讯作者：
E. Pan