NB JOSEPHSON JUNCTION WITH AN ALNX BARRIER MADE BY PLASMA NITRIDATION
NB JOSEPHSON JUNCTION WITH AN ALNX BARRIER MADE BY PLASMA NITRIDATION
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DOI：
10.1063/1.107603
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发表时间：
1992-09-07
影响因子：
4
通讯作者：
HASUO, S
中科院分区：
文献类型：
--
作者：
SHIOTA, T;IMAMURA, T;HASUO, S
我们研究了铌与氮化铝、AlNx 的结，隧道势垒是通过铝膜表面等离子体氮化形成的。 A1Nx 势垒结表现出电流-电压特性，漏电流足够小，临界电流密度足够大，可用于约瑟夫森数字电路。与 A1Ox 势垒结相比，A1Nx 势垒结表现出改进的退火稳定性。对于A1Nx势垒结，250℃退火期间临界电流的下降得到显着抑制。
We studied Nb junctions with aluminum nitride, A1Nx, tunnel barriers formed by plasma nitridation on aluminum film surfaces. The A1Nx barrier junctions show current-voltage characteristics with leakage currents small enough and critical current densities large enough for use in Josephson digital circuits. The A1Nx, barrier junction exhibited improved annealing stability as compared to A1Ox barrier junctions. For the A1Nx barrier junction, decreases in critical current during annealing at 250-degrees-C are remarkably suppressed.