Optimization of CVD parameters for graphene synthesis through design of experiments
Optimization of CVD parameters for graphene synthesis through design of experiments
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DOI：
10.1002/pssb.201600629
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发表时间：
2017-05-01
影响因子：
1.6
通讯作者：
Tanemura, Masaki
中科院分区：
文献类型：
--
作者：
Papon, Remi;Pierlot, Christel;Tanemura, Masaki
由于化学气相沉积（CVD）中的许多相互依赖的参数，石墨烯域的期望尺寸和质量的优化过程通常是非常困难的。在这里，所谓的实验设计的方法被施加到估计的相对重要性和价值的一些这些参数和它们的相互作用的CVD生长的石墨烯在铜箔上使用废塑料作为固体源。我们发现生长温度、时间、加热速率和衬底的预退火时间显著影响石墨烯的生长。特别地，生长时间和碳源温度的增加速率似乎是石墨烯畴生长的主要因素，其中仅操纵这两个参数就可以显著地改变晶体的尺寸。因此，我们的实验表明，对于使用废塑料合成较大的石墨烯畴，不仅Cu衬底的生长参数影响石墨烯生长，而且碳源加热速率也影响石墨烯生长。
The optimization process of the desired size and quality of graphene domains is usually very difficult due to the numerous interdependent parameters in chemical vapor deposition (CVD). Here, the method so-called designs of experiments is applied to estimate the relative importance and value of some of these parameters and their interactions for the CVD growth of graphene on Cu foil using waste plastic as a solid source. We found that the growth temperature, time, rate of heating, and preannealing time of the substrate influence significantly graphene growth. In particular, the growth time and rate of increasing of the carbon source temperature appear as the main factors for the growth of graphene domains, where the manipulation of only these two parameters could dramatically change the size of crystals. Thus, our experiment shows that for synthesis of larger graphene domains using waste plastic not only do the growth parameters of Cu substrate influence graphene growth but also the carbon source rate of heating.