Eu2+‐doped barium thioaluminate EL devices prepared by two‐target pulsed‐electron‐beam evaporation
Eu2+‐doped barium thioaluminate EL devices prepared by two‐target pulsed‐electron‐beam evaporation
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双靶脉冲电子束蒸发制备Eu2+掺杂硫代铝酸钡EL器件
DOI：
10.1889/1.1828758
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发表时间：
2000
影响因子：
2.3
通讯作者：
R. Nakano
中科院分区：
文献类型：
--
作者：
M. Kawanishi;N. Miura;H. Matumoto;R. Nakano
摘要-开发了满足全色TFEL显示器要求的新型蓝光发射薄膜电致发光（TFEL）器件。Eu 2+掺杂的BaAl 2S 4薄膜用于发射层。采用双靶脉冲电子束蒸发法制备BaAl 2S 4：Eu薄膜，该方法适合于难以获得化学计量比薄膜的多元化合物的沉积。EL光谱仅在470 nm左右有一个峰值。国际照明委员会（CIE）色坐标为x = 0.12和y = 0.10。50 Hz脉冲电压的亮度水平为65 cd/m2。
Abstract— New blue‐emitting thin‐film‐electroluminescent (TFEL) devices that satisfy the requirements for full‐color TFEL displays were developed. Eu2+‐doped BaAl2S4 thin films were used for the emission layer. BaAl2S4:Eu thin films were prepared by two‐target pulsed‐electron‐beam evaporation suitable for the deposition of multinary compounds that have difficulty in obtaining stoichiometoric thin films. The EL spectrum only had a peak at around 470 nm. The Commission Interantionale de l'Eclairge (CIE) color coordinates were x = 0.12 and y = 0.10. The luminance level from a 50‐Hz pulses voltage was 65 cd/m2.
影响因子：
1.5
作者：
N. Miura;M. Kawanishi;H. Matsumoto;R. Nakano
通讯作者：
N. Miura;M. Kawanishi;H. Matsumoto;R. Nakano