SUBLATTICE REVERSAL IN GAAS/SI/GAAS (100) HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY
SUBLATTICE REVERSAL IN GAAS/SI/GAAS (100) HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY
复制标题
通过分子束外延实现 GAAS/SI/GAAS (100) 异质结构中的亚晶格反转
DOI：
10.1143/jjap.37.l1493
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发表时间：
1998
影响因子：
1.5
通讯作者：
A. Ito
中科院分区：
文献类型：
--
作者：
S. Koh;T. Kondo;Tetsuya Ishiwada;C. Iwamoto;H. Ichinose;H. Yaguchi;T. Usami;Y. Shiraki;A. Ito
在III-V族衬底上的IV族外延层上生长的III-V族化合物半导体中的子晶格反转已经被提出用于制造具有畴反转化合物半导体结构的非线性光学器件。在GaAs/Si/GaAs（100）系统中展示了子晶格反转外延，并通过反射高能电子衍射、横截面透射电子显微镜、各向异性蚀刻和光学二次谐波产生测量证实。目前的亚晶格反转似乎是由在GaAs/Si界面处产生的反相畴的自湮灭所辅助的。
Sublattice reversal in III-V compound semiconductors grown on group-IV epitaxial layers on III-V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound semiconductor structures. Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100) system and confirmed by reflection high energy electron diffraction, cross-sectional transmission electron microscopy, anisotropic etching, and optical second-harmonic generation measurements. The present sublattice reversal seems to be assisted by self annihilation of antiphase domains generated at GaAs/Si interfaces.