Losses in polycrystalline silicon waveguides
Losses in polycrystalline silicon waveguides
复制标题
DOI：
10.1063/1.116300
复制
发表时间：
1996-04-08
影响因子：
4
通讯作者：
Kimerling, LC
中科院分区：
文献类型：
--
作者：
Foresi, JS;Black, MR;Kimerling, LC
本文用切回法测量了SiO_2包层多晶硅波导的损耗。我们报告的34分贝/厘米的波长为1.55 μ m的化学机械抛光多晶硅沉积在625摄氏度的波导制造的损失。这些损失是两个数量级低于报告的吸收测量多晶硅。由在625摄氏度下沉积的未抛光多晶硅制成的波导表现出77 dB/cm的损耗。我们发现由于表面散射的计算和测量的损失之间有很好的协议。(C)1996年美国物理学会。
The losses of polycrystalline silicon (polySi) waveguides clad by SiO2 are measured by the cutback technique. We report losses of 34 dB/cm at a wavelength of 1.55 mu m in waveguides fabricated from chemical mechanical polished polySi deposited at 625 degrees C. These losses are two orders of magnitude lower than reported absorption measurements for polySi. Waveguides fabricated from unpolished polySi deposited at 625 degrees C exhibit losses of 77 dB/cm. We find good agreement between calculated and measured losses due to surface scattering. (C) 1996 American Institute of Physics.