Quantum control and manipulation of donor electrons in Si-based quantum computing
Quantum control and manipulation of donor electrons in Si-based quantum computing
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DOI：
10.1063/1.3124084
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发表时间：
2009-06-15
影响因子：
3.2
通讯作者：
Das Sarma, S.
中科院分区：
文献类型：
--
作者：
Calderon, M. J.;Saraiva, A.;Das Sarma, S.
由于其可扩展性，长自旋相干时间，以及过去几十年来硅技术和小型化的惊人进展，掺杂硅是量子计算的一个有前途的候选者。这个量子计算机的提议最终依赖于在Si/势垒（例如SiO2）界面附近束缚在供体上的电子的量子控制。我们在这里讨论了几个重要的问题，并定义了关键参数，这些参数建立了允许通过外部电场和磁场操纵Si中的供体电子的条件。(C) 2009年美国物理研究所。(DOI: 10.1063/1.3124084)
Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the past few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g., SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3124084]