Performance enhancement in InZnO thin-film transistors with compounded ZrO2–Al2O3 nanolaminate as gate insulators
Performance enhancement in InZnO thin-film transistors with compounded ZrO2–Al2O3 nanolaminate as gate insulators
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DOI：
10.1016/j.ceramint.2016.02.014
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发表时间：
2016-05
影响因子：
5.2
通讯作者：
Jianhua Zhang;Xingwei Ding;Jun Li;Hao Zhang;Xueyin Jiang;Zhilin Zhang
中科院分区：
文献类型：
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作者：
Jianhua Zhang;Xingwei Ding;Jun Li;Hao Zhang;Xueyin Jiang;Zhilin Zhang
采用原子层沉积法（ALD）制备了ZrO 2-Al 2 O3复合纳米叠层薄膜，并成功地将其用于集成高性能InZnO（IZO）薄膜晶体管（TFT）。结果发现，纳米层压薄膜联合收割机结合了组分薄膜的优点，与单层栅绝缘体相比，生产的TFT具有更好的性能和稳定性。采用ZrO_2-Al_2 O_3栅绝缘体后，IZO TFT的迁移率提高了约22%，稳定性也得到了改善。研究了不同温度下IZO-TFT的传输特性，发现ZrO_2-Al_2O_3纳米叠层作为栅绝缘层的TFT具有更好的温度稳定性。由温度相关的转移曲线可以得到较大的下降速率（~ 1.45 eV/V）、较低的激活能（Ea，~ 1.38 eV）和较小的态密度（DOS）。结果表明，用ZrO 2-Al 2 O3纳米叠层作为栅绝缘层的InZnO薄膜晶体管的温度稳定性的提高归因于较小的DOS。
We fabricated compounded ZrO2–Al2O3nanolaminate dielectrics by the atomic layer deposition (ALD) and used them to successfully integrate the high-performance InZnO (IZO) thin-film transistors (TFTs). It is found that nanolaminate dielectrics combine the advantages of constituent dielectrics and produce TFTs with improved performance and stability compared to single-layer gate insulators. The mobility in IZO-TFT was enhanced about 22% by using ZrO2–Al2O3gate insulators and the stability was also improved. The transfer characteristics of IZO-TFTs at different temperatures were also investigated and temperature stability enhancement was observed for the TFT with ZrO2–Al2O3nanolaminates as gate insulators. A larger falling rate (∼1.45 eV/V), a lower activation energy (Ea, ∼1.38 eV) and a smaller density-of-states (DOS) were obtained based on the temperature-dependent transfer curves. The results showed that temperature stability enhancement in InZnO thin-film transistors with ZrO2–Al2O3nanolaminate as gate insulators was attributed to the smaller DOS.