Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires
Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires
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DOI：
10.1063/1.2801554
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发表时间：
2007-10
影响因子：
4
通讯作者：
A. Pasquier;Daniel D T Mastrogiovanni;Lauren A. Klein;Tong Wang;E. Garfunkel
中科院分区：
文献类型：
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作者：
A. Pasquier;Daniel D T Mastrogiovanni;Lauren A. Klein;Tong Wang;E. Garfunkel
锗纳米线被用来增强有机光伏器件的性能。采用20 nm Au籽晶催化的气-液-固法在SiO2衬底上生长了1-5μm的Ge纳米线。一旦生长，GeNW分散在溶液中与聚（3-己基噻吩）和旋转浇铸成膜。薄膜的光致发光和外量子效率表明激子解离和光电流产生显着增加。结果表明，锗纳米线可以作为电子受体的体异质结混合无机/有机光伏器件。讨论了GeNW对器件特性的影响。
Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1–5μm on SiO2 by the vapor-liquid-solid method catalyzed by 20nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.