Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures.
Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures.
复制标题
一维 Mo6Te6 纳米线和二维 MoTe2 超薄膜异质结构的相控生长。
DOI:
10.1021/acs.nanolett.7b03058
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发表时间:
2017
期刊:
影响因子:
--
通讯作者:
Qin Shiqiao
中科院分区:
文献类型:
--
作者:
Yu Yayun;Wang Guang;Tan Yuan;Wu Nannan;Zhang Xue-Ao;Qin Shiqiao
Controllable synthesizing of one-dimensional–two-dimensional (1D–2D) heterostructures and tuning their atomic and electronic structures is nowadays of particular interest due to the extraordinary properties and potential applications. Here, we demonstrate the temperature-induced phase-controlled growth of 1D Mo6Te6–2D MoTe2heterostructures via molecular beam epitaxy. In situ scanning tunneling microscopy study shows 2D ultrathin films are synthesized at low temperature range, while 1D nanowires gradually arise and dominate as temperature increasing. X-ray photoelectron spectroscopy confirms the good stoichiometry and scanning tunneling spectroscopy reveals the semimetallic property of grown Mo6Te6nanowires. Through in situ annealing, a phase transition from 2D MoTe2to 1D Mo6Te6is induced, thus forming a semimetal–semiconductor junction in atomic level. An upward band bending of 2H-MoTe2is caused by lateral hole injection from Mo6Te6. The work suggests a new route to synthesize 1D semimetallic transition metal chalcogenide nanowires, which could serve as ultrasmall conducting building blocks and enable band engineering in future 1D–2D heterostructure devices.