Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures.

Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures.
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一维 Mo6Te6 纳米线和二维 MoTe2 超薄膜异质结构的相控生长。

DOI:
10.1021/acs.nanolett.7b03058
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发表时间:
2017
期刊:
Nano Lett
影响因子:
--
通讯作者:
Qin Shiqiao
Qin Shiqiao
中科院分区:
其他
文献类型:
--
作者:
Yu Yayun;Wang Guang;Tan Yuan;Wu Nannan;Zhang Xue-Ao;Qin Shiqiao

文献摘要

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一维-二维(1D-2D)异质结构的可控合成及其原子和电子结构的调控是目前研究的热点之一。在这里,我们展示了通过分子束外延的温度诱导相控生长的一维Mo 6 Te 6-二维MoTe 2异质结构。原位扫描隧道显微镜研究表明,在较低的温度范围内,二维纳米线薄膜的合成,而一维纳米线逐渐出现,并占主导地位,随着温度的升高。X射线光电子能谱证实了Mo 6 Te 6纳米线具有良好的化学计量比,扫描隧道能谱揭示了Mo 6 Te 6纳米线的半金属性质。通过原位退火,诱导了从二维MoTe 2到一维Mo 6 Te 6的相变,从而形成了原子级的半金属-半导体结. 2 H-MoTe 2的带向上弯曲是由Mo 6 Te 6的侧向空穴注入引起的。这项工作提出了一种合成一维半金属过渡金属硫属化物纳米线的新途径,它可以作为超小的导电构件,并在未来的1D-2D异质结构器件中实现能带工程。
Controllable synthesizing of one-dimensional–two-dimensional (1D–2D) heterostructures and tuning their atomic and electronic structures is nowadays of particular interest due to the extraordinary properties and potential applications. Here, we demonstrate the temperature-induced phase-controlled growth of 1D Mo6Te6–2D MoTe2heterostructures via molecular beam epitaxy. In situ scanning tunneling microscopy study shows 2D ultrathin films are synthesized at low temperature range, while 1D nanowires gradually arise and dominate as temperature increasing. X-ray photoelectron spectroscopy confirms the good stoichiometry and scanning tunneling spectroscopy reveals the semimetallic property of grown Mo6Te6nanowires. Through in situ annealing, a phase transition from 2D MoTe2to 1D Mo6Te6is induced, thus forming a semimetal–semiconductor junction in atomic level. An upward band bending of 2H-MoTe2is caused by lateral hole injection from Mo6Te6. The work suggests a new route to synthesize 1D semimetallic transition metal chalcogenide nanowires, which could serve as ultrasmall conducting building blocks and enable band engineering in future 1D–2D heterostructure devices.