Growth of Adlayer Graphene on Cu Studied by Carbon Isotope Labeling
Growth of Adlayer Graphene on Cu Studied by Carbon Isotope Labeling
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通过碳同位素标记研究铜上粘附层石墨烯的生长
DOI：
10.1021/nl303879k
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发表时间：
2013-02-01
期刊：
影响因子：
10.8
通讯作者：
Cai, Weiwei
中科院分区：
文献类型：
--
作者：
Li, Qiongyu;Chou, Harry;Cai, Weiwei
通过甲烷前体的同位素标记研究了铜箔上双层和多层石墨烯的生长。同位素标记的石墨烯薄膜通过显微拉曼图谱和飞行时间二次离子质谱进行表征。我们的研究表明，在高温生长过程中，吸附层在顶部、连续的石墨烯层和铜基板下方同时形成。此外，吸附层共享相同的成核中心，并且在一处成核的所有吸附层具有相同的边缘终止。这些结果表明，吸附层的生长是通过捕获在第一层和基底之间的“纳米化学气相沉积”室中的甲烷（或CHx，x < 4）的催化分解来进行的。基于这些结果，通过应用低得多的生长速率合成了亚毫米双层石墨烯。
The growth of bilayer and multilayer graphene on copper foils was studied by isotopic labeling of the methane precursor. Isotope-labeled graphene films were characterized by micro-Raman mapping and time-of-flight secondary ion mass spectrometry. Our investigation shows that during growth at high temperature, the adlayers formed simultaneously and beneath the top, continuous layer of graphene and the Cu substrate. Additionally, the adlayers share the same nucleation center and all adlayers nucleating in one place have the same edge termination. These results suggest that adlayer growth proceeds by catalytic decomposition of methane (or CHx, x < 4) trapped in a "nano-chemical vapor deposition" chamber between the first layer and the substrate. On the basis of these results, submillimeter bilayer graphene was synthesized by applying a much lower growth rate.