Anodic deposition of hydrous ruthenium oxide for supercapacitors
Anodic deposition of hydrous ruthenium oxide for supercapacitors
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DOI：
10.1016/j.jpowsour.2006.09.060
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发表时间：
2007-01-01
影响因子：
9.2
通讯作者：
Chang, Kuo-Hsin
中科院分区：
文献类型：
--
作者：
Hu, Chi-Chang;Liu, Ming-Jue;Chang, Kuo-Hsin
本文介绍了在水介质中，以RuCl_3·xH（2）O为原料，在添加或不添加醋酸根离子（CH_3COO-，AcO-）作为络合剂的情况下，成功地阳极沉积了水合氧化钌（RuO_2中心点xH（2）O）。如此沉积的RuO 2中心点xH（2）O的益处包括在Ti-RuO 2-xH 2 O界面处的低电子跳跃电阻和低接触电阻，这在电化学阻抗谱（EIS）研究中得以阐明。在150 ℃空气中退火2 h，可进一步提高RuO 2中心点xH（2）O的循环稳定性、比电容和功率性能。用扫描电子显微镜（SEM）观察了RuO 2中心点xH（2）O薄膜的沉积和退火后的形貌，发现其形貌与热分解的RuO 2非常相似。从沉积态和退火态RuO（2中心点）xH（2）O膜的EIS谱中分别获得的660和1650 Hz的高起始频率明确地说明了通过阳极沉积制备的两种氧化物膜的高功率优点，而不考虑其简单、一步、可靠、低成本和电极制备的通用性的优点。(c)2006 Elsevier B. V.保留所有权利。
This communication demonstrates the success in the anodic deposition of hydrous ruthenium oxide (denoted as RuO2 center dot xH(2)O) from RuCl3.xH(2)O in aqueous media with/without adding acetate ions (CH3COO-, AcO-) as the complex agent. The benefits of as-deposited RuO2 center dot xH(2)O include the low electron-hopping resistance and the low contact resistance at the Ti-Ru02-xH20 interface which are clarified in electrochemical impedance spectroscopic (EIS) studies. The cycling stability, specific capacitance, and power performance of as-deposited RuO2 center dot xH(2)O are further improved by annealing in air at 150 degrees C for 2h. The morphologies of as-deposited and annealed RuO2 center dot xH(2)O films, examined by scanning electron microscopy (SEM), are very similar to that of thermally decomposed RuO2. The high onset frequencies of 660 and 1650 Hz obtained from EIS spectra for the as-deposited and annealed RuO(2 center dot)xH(2)O films, respectively, definitely illustrate the high-power merits of both oxide films prepared by means of the anodic deposition without considering the advantages of its simplicity, one-step, reliability, low cost, and versatility for electrode preparation. (c) 2006 Elsevier B.V. All rights reserved.