Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer
Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer
复制标题
具有范德华缓冲器的可靠非易失性存储器黑磷铁电场效应晶体管
DOI：
10.1021/acsami.9b15457
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发表时间：
2019
影响因子：
9.5
通讯作者：
Chen Jian-Hao
中科院分区：
文献类型：
--
作者：
Yan Shili;Huang Hai;Xie Zhijian;Ye Guojun;Li Xiao-Xi;Taniguchi Takashi;Watanabe Kenji;Han Zheng;Chen Xianhui;Wang Jianlu;Chen Jian-Hao
二维铁电场效应晶体管（2D-FeFET）在信息存储和处理方面具有广阔的应用前景。然而，2D-FeFET的经常观察到且难以控制的抗滞后响应（例如，与铁电电介质的实际极化相反的器件的电阻状态的滞后切换）代表了这种器件的工业应用中的主要问题。在这里，我们展示了一个货车德瓦尔斯缓冲技术，消除反滞后黑磷（BP）2D-FeFET和恢复其固有的滞后行为。我们的改进BP 2D-FeFET表现出出色的性能，包括高室温载流子迁移率，对栅极快速响应的鲁棒的双稳态，在零栅极电压下的大开/关比，大且更稳定的存储窗口，以及长的保留时间。在重复的门操作期间，缓冲器件的存储器窗口比无缓冲器件稳定107000倍。这种方法在利用2D-FeFET的固有特性的未来信息技术应用中可能是至关重要的。
Two-dimensional material-based ferroelectric field-effect transistors (2D-FeFETs) hold great promise in information storage and processing. However, an often-observed and hard-to-control anti-hysteresis response of 2D-FeFETs, for example, hysteretic switching of the resistance states of the devices opposite to that of the actual polarization of the ferroelectric dielectric, represents a major issue in the industrial applications of such devices. Here, we demonstrate a van der Waals buffer technique that eliminates anti-hysteresis in black phosphorus (BP) 2D-FeFETs and restores their intrinsic hysteretic behavior. Our modified BP 2D-FeFETs showed outstanding performance including high room-temperature carrier mobility, robust bistable states with fast response to a gate, a large on/off ratio at zero gate voltage, a large and considerably more stable memory window, and a long retention time. During repeated gate operation, the memory window of the buffered device is ∼7000 times more stable than the unbuffered device. Such a method could be crucial in future information technological applications that utilize the intrinsic properties of 2D-FeFETs.