Improvement of Photocatalytic H2-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn2S4 with Cu and In
Improvement of Photocatalytic H2-Generation under Visible Light Irradiation by Controlling the Band Gap of ZnIn2S4 with Cu and In
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DOI：
10.3390/catal9080681
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发表时间：
2019-08
期刊：
影响因子：
3.9
通讯作者：
Ikki Tateishi;M. Furukawa;H. Katsumata;S. Kaneco
中科院分区：
文献类型：
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作者：
Ikki Tateishi;M. Furukawa;H. Katsumata;S. Kaneco
通过简单的一步溶剂热法制备了带隙控制光催化剂（Zn0.74Cu0.13In2S3.805）。研究了Cu+掺杂和过量In对ZnIn2S4光催化剂光催化活性的影响。此外，还评估了光学性能、表面形貌和晶体结构。 Zn0.74Cu0.13In2S3.805 实现了最大析氢速率（2370 µmol h−1 g−1），在可见光（λ ≥ 420 nm）下比未处理的 ZnIn2S4 高约五倍。与ZnIn2S4相比，Zn0.74Cu0.13In2S3.805的带隙通过提高价带的最大位置而降低至1.98eV。此外，有效减少了电子空穴对的复合。这项研究有助于开发可见光下高活性的光催化剂。
The band gap controlled photocatalyst (Zn0.74Cu0.13In2S3.805) was prepared via a simple one-step solvothermal method. The effects of doping of Cu+ and excess In on the photocatalytic activity of ZnIn2S4 photocatalyst were investigated. In addition, optical properties, surface morphology and crystal structure were evaluated. The maximum H2 evolution rate (2370 µmol h−1 g−1) was achieved with Zn0.74Cu0.13In2S3.805, which was about five times higher than that of untreated ZnIn2S4 under visible light (λ ≥ 420 nm). The band gap of Zn0.74Cu0.13In2S3.805 decreased to 1.98 eV by raising the maximum position of the valence band, compared to ZnIn2S4. Furthermore, the recombination of electron hole pairs was effectively reduced. This research contributes to the development of highly active photocatalysts under visible light.