Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance: Hydrogen Passivation Effects
Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance: Hydrogen Passivation Effects
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DOI：
10.1143/jjap.48.081201
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发表时间：
2009-08
影响因子：
1.5
通讯作者：
K. Murakami;M. Tsujimura;Ryota Shirakawa;N. Uchida;N. Fukata
中科院分区：
文献类型：
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作者：
K. Murakami;M. Tsujimura;Ryota Shirakawa;N. Uchida;N. Fukata
利用电子自旋共振（ESR）技术研究了低温下硅纳米晶（SiNCs）嵌入非晶SiO2层和P纳米掺杂。发现需要氢原子处理来确定SiNC中掺杂施主和准导电子的适当掺杂效应和电子状态。对孤立P施主的ESR超精细结构的微波功率和温度依赖性的研究表明，自旋-晶格弛豫时间T1随着SiNCs尺寸的减小而变长。根据施主浓度和温度依赖性的实验结果，我们提出了一个新的模型，即尺寸约为5.8 nm的SiNC的自旋性质强烈依赖于SiNC中掺杂的施主数量，即，奇数或偶数。使用该模型，我们还估计每个SiNC中包括的P施主的数量为1至至多6，其小于平均P掺杂浓度的1/10。
Si nanocrystals (SiNCs) embedded in formed amorphous SiO2 layer and P nanoscale doping have been investigated by electron spin resonance (ESR) measurements at low temperatures. Hydrogen atom treatment is found to be required to determine the proper doping effects and electronic states of doped donors and quasi-conduction electrons in SiNCs. The dependences of microwave power and temperature for the ESR hyperfine structure of isolated P donors indicate that the spin–lattice relaxation time T1 becomes longer with decreasing size of SiNCs. From the experimental results of donor concentration and temperature dependence, we propose a novel model that the spin property of SiNCs of approximately 5.8 nm size is strongly dependent on the number of donors doped in a SiNC, i.e., odd or even. Using this model, we also estimate the numbers of P donors included in each SiNC to be 1 to at most 6, which are less than 1/10 of the average P doping concentrations.