Preliminary characterization of the response of an organic field effect transistor to ionizing radiation
Preliminary characterization of the response of an organic field effect transistor to ionizing radiation
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DOI：
10.1016/j.radmeas.2018.08.008
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发表时间：
2018-11-01
影响因子：
2
通讯作者：
Syme, Alasdair
中科院分区：
文献类型：
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作者：
Hupman, Michael A.;Hill, Ian G.;Syme, Alasdair
有机薄膜晶体管（OTFT）作为一种新型辐射探测器进行了研究。OTFT制作在具有PMMA介电层和并五苯半导体的柔性PET衬底上。使用千伏（100和180 kVp）和兆伏（6和18 MV）光子束照射OTFT高达400戈伊。使用6 MV对一个OTFT进行1000戈伊辐照，以观察器械的寿命。辐照器件导致每个器件的正阈值电压偏移。每单位剂量的阈值电压偏移的幅度随着累积剂量而降低，直到在大约200戈伊后稳定。在低累积剂量下，灵敏度范围为2至10 mV/戈伊，在各种OTFT上累积剂量为200戈伊后，灵敏度降低至0.5-1.5 mV/戈伊。在400戈伊后，所有的装置仍然是功能性的，对于100 kV、180 kV、6 MV和18 MV的射束质量，迁移率分别损失约15、14、12和9%。在使用6 MV进行1000戈伊照射后，OTFT仍有功能，300戈伊照射后灵敏度为0.8 +/- 0.1 mV/戈伊。这项研究表明，柔性衬底上的OTFT显示出对各种质量的光子照射的可测量响应。
Organic thin film transistors (OTFT) were investigated as a novel radiation detector. The OTFTs were fabricated on a flexible PET substrate with a PMMA dielectric layer and a pentacene semiconductor. OTFTs were irradiated up to 400 Gy using kilovoltage (100 and 180 kVp) and megavoltage (6 and 18 MV) photon beams. One OTFT was irradiated to 1000 Gy using 6 MV to observe the longevity of the device. Irradiating the devices caused a positive threshold voltage shift in each device. The magnitude of the threshold voltage shift per unit dose decreased with accumulated dose until it stabilized after approximately 200 Gy. The sensitivity ranged from 2 to 10 mV/Gy at low accumulated dose and decreased to 0.5-1.5 mV/Gy after 200 Gy of accumulated dose across the various OTFTs. After 400 Gy all of the devices were still functional with a loss in mobility of about 15, 14, 12 and 9% for beam qualities of 100 kV, 180 kV, 6 MV, and 18 MV, respectively. After 1000 Gy using 6 MV the OTFT was still functional with a sensitivity of 0.8 +/- 0.1 mV/Gy after 300 Gy. This study showed that an OTFT on a flexible substrate shows a measureable response to photon irradiation of various qualities.