Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique
Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique
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DOI：
10.1109/23.340544
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发表时间：
1994-12
影响因子：
1.8
通讯作者：
T. Matsukawa;A. Kishida;T. Tanii;M. Koh;K. Horita;K. Hara;B. Shigeta;M. Goto;S. Matsuda
中科院分区：
文献类型：
--
作者：
T. Matsukawa;A. Kishida;T. Tanii;M. Koh;K. Horita;K. Hara;B. Shigeta;M. Goto;S. Matsuda
Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage (V/sub th/) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error. >
