Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods
Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods
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DOI：
10.1021/acsami.6b11675
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发表时间：
2016-11-23
影响因子：
9.5
通讯作者：
Conibeert, Gavin
中科院分区：
文献类型：
--
作者：
Chen, Weijian;Wen, Xiaoming;Conibeert, Gavin
使用先进的双光子激发共聚焦显微镜，与时间分辨光谱，我们表征InGaN/GaN多量子威尔斯纳米棒异质结构，并证明了KOH处理的钝化效果。采用纳米球光刻技术制备了高质量的InGaN/GaN纳米棒作为发光二极管器件的候选材料。深度和时间分辨的表征在纳米级提供了详细的载流子动态分析有助于理解的光学性能。同时获得了InGaN量子阱和缺陷的纳米级空间分辨图像。我们证明了纳米棒刻蚀提高了光提取效率，并且已经发现适当的KOH处理可以有效地减少表面缺陷并增强发光。光学表征技术提供了深度分辨和时间分辨的载流子动力学与纳米空间分辨映射，这是至关重要的，全面和彻底的理解纳米结构材料，并提供了新的见解，以改善材料的制造和应用。
Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.