Multiphoton-assisted absorption of terahertz radiation in InAs/AlSb heterojunctions
Multiphoton-assisted absorption of terahertz radiation in InAs/AlSb heterojunctions
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DOI：
10.1103/physrevb.67.085309
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发表时间：
2003-02
影响因子：
3.7
通讯作者：
J. Cao;X. Lei
中科院分区：
文献类型：
--
作者：
J. Cao;X. Lei
在扩展平衡方程理论中，通过考虑多光子过程和导价带间冲击电离，我们计算了InAs/AlSb异质结（HJ’s）中强太赫兹（THz）辐射的自由载流子吸收百分比。在计算中，我们包括了电子-声-声子散射，电子-极-光-声子散射，以及来自远端带电杂质和来自背景杂质的弹性散射，并且尽可能多地考虑了所需的空穴子带和多光子通道，以获得所需的精度。结果表明，振幅较大或频率较低的太赫兹辐射对电输运特性的影响更大。在f a c = 0.64 THz时，所得的InAs/AlSb HJ的吸收百分比与实验数据吻合较好。
We have calculated the free-carrier absorption percentage of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ's), by considering multiple photon process and conduction-valence interband impact ionizationwithin the extended balance-equation theory. In the calculations we have included the electron-acoustic-phonon scattering, electron-polar-optical-phonon scattering, and elastic scattering both from the remote charged impurities and from the background impurities, and as many as needed hole subbands and multiphoton channels are self-consistently taken into account for getting a required accuracy. It is indicated that the THz radiation with a larger amplitude E a c or a lower frequency f a c has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at f a c = 0.64 THz.