Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3
Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3
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DOI：
10.1103/physrevlett.105.176602
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发表时间：
2010-10-19
影响因子：
8.6
通讯作者：
Lu, L.
中科院分区：
文献类型：
--
作者：
Chen, J.;Qin, H. J.;Lu, L.
我们报告说，Bi2Se3薄膜可以外延生长在SrTiO3衬底上，这使得非常大的可调载流子密度与背栅。所观察到的低场磁导率由于弱反局域化（WAL）有一个非常弱的栅电压依赖性，除非电子密度降低到非常低的值。WAL的这种转变与纵向和霍尔折射率的异常变化有关。我们的研究结果表明，在大的负栅电压和WAL现象中的表面状态的可能作用，抑制体电导率。
We report that Bi2Se3 thin films can be epitaxially grown on SrTiO3 substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.