Air-Stable Wide-Bandgap 2D Semiconductor ZnIn2S4
Air-Stable Wide-Bandgap 2D Semiconductor ZnIn2S4
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空气稳定宽带隙二维半导体 ZnIn2S4
DOI：
10.1002/pssr.202000085
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Changjin Zhang
中科院分区：
文献类型：
--
作者：
Shirui Weng;Weili Zhen;Yaodong Li;Xiu Yan;Hui Han;Hui Huang;Li Pi;Wenka Zhu;Hui Li;Changjin Zhang
寻找具有大电子带隙和高光电性能的新型2D半导体是基础研究的关键，因为这些材料可能导致光电子器件的可扩展制造。然而，具有上级光电性能的空气稳定2D半导体目前仍然难以捉摸。在此，报道了ZnIn2S42D半导体的发现，其展示了约2eV的有吸引力的厚度依赖的直接带隙。ZnIn2S4还具有优异的空气稳定性和良好的光电性能，使其成为研究新量子现象以及在半导体工业中应用的有前途的材料基础。
The search for new 2D semiconductors with large electronic bandgap and high optoelectronic performance is pivotal for fundamental research, as such materials may lead to the scalable fabrication of optoelectronics devices. However, air‐stable 2D semiconductors with superior optoelectronic performance remain elusive at present. Herein, the discovery of ZnIn2S42D semiconductor is reported, which demonstrates an attractive thickness‐dependent direct bandgap of about 2 eV. ZnIn2S4also exhibits excellent air stability and good optoelectronic performance, making it a promising material base for investigation of new quantum phenomena as well as for applications in the semiconductor industry.