Z-contrast imaging of dislocation cores at the GaAs/Si interface
Z-contrast imaging of dislocation cores at the GaAs/Si interface
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DOI：
10.1063/1.1511808
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发表时间：
2002-09
影响因子：
4
通讯作者：
S. Lopatin;S. Pennycook;J. Narayan;G. Duscher
中科院分区：
文献类型：
--
作者：
S. Lopatin;S. Pennycook;J. Narayan;G. Duscher
采用原子分辨率z对比成像技术研究了金属有机化学气相沉积法生长的外延GaAs薄膜与硅之间的界面。z对比成像提供化学成分信息，并允许直接解释显微照片，而无需模拟。确定了三种不同类型的脱位。正如预期的那样，在60°位错的原子结构中发现了悬空键。其中一个观察到的90°位错具有重建的原子核心结构（没有悬空键）。另一个90°位错的核心结构表现为悬垂键。
The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs without simulation. Three different types of dislocations were identified. As expected, a dangling bond was found in the atomic structure of the 60° dislocation. One of the observed 90° dislocations had the reconstructed atomic core structure (with no dangling bonds). The core structure of the other 90° dislocation exhibited a dangling bond.