Structural Approach to the Problem of Oxygen Content in Alpha Silicon Nitride
Structural Approach to the Problem of Oxygen Content in Alpha Silicon Nitride
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DOI：
10.1111/j.1151-2916.1975.tb19564.x
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发表时间：
1975-03
影响因子：
3.9
通讯作者：
Katsuo Kato;Z. Inoue;K. Kijima;I. Kawada;Hirokichi Tanaka;T. Yamane
中科院分区：
文献类型：
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作者：
Katsuo Kato;Z. Inoue;K. Kijima;I. Kawada;Hirokichi Tanaka;T. Yamane
采用化学气相沉积法制备单晶样品，用x射线法重新研究了α-Si3N4的晶体结构。样品氧含量（0.05±0.03%）通过14 MeV中子活化分析测定。α形式结晶于空间群P31c中，单位孔尺寸分别为a=7.818±0.003 a和c= 5.591±0.004 a。利用1143个观测到的结构因子，采用全矩阵最小二乘法对结构进行细化。测定的Si-N距离范围为1.715 ~ 1.759 A，最终R值为0.041。结构证据表明α形态基本为纯Si3N4。
The crystal structure of α-Si3N4 was reinvestigated by an X-ray method using a single-crystal specimen prepared by chemical vapor deposition. The oxygen content of the specimen (0.05 ± 0.03%) was determined by 14 MeV neutron activation analysis. The α form crystallizes in the space group P31c with uniteell dimensions a=7.818 ± 0.003 A and c= 5.591 ± 0.004 A. The structure was refined by the full-matrix least-squares method using 1143 observed structure factors. The Si-N distances determind ranged from 1.715 to 1.759 A, and the final value of R was 0.041. Structural evidences indicated that the α form is essentially pure Si3N4.