Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high‐k gate dielectrics
Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high‐k gate dielectrics
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高k栅介质非晶BaO、SrO和Ba0.7Sr0.3O的制备及电学表征
DOI：
10.1002/pssc.200982477
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
H. Pfnür
中科院分区：
文献类型：
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作者：
D. Müller;A. Cosceev;C. Brand;K. Hofmann;H. Pfnür
我们报道了室温下在n-Si（001）上生长的非晶BaO， SrO和Ba0.7Sr0.3O作为替代栅氧化物的带偏移测量和电学特性，而无需进一步处理。这些材料提供的相对介电常数接近于超薄薄膜（等效氧化物厚度低于1nm）的体积值，并且具有非常低的可充电阱密度。BaO和SrO薄膜的界面缺陷密度与其他高k材料相当，但Ba0.7Sr0.3O薄膜的界面缺陷密度要低一个数量级。这证明了化学和结构界面效应的重要性（©2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n-Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultra-thin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high-k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr0.3O. This demonstrates the importance of both chemical and structural interface effects (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)