Effect of capping layers on the near-surface region of SrVO3 films
Effect of capping layers on the near-surface region of SrVO3 films
复制标题
覆盖层对 SrVO3 薄膜近表面区域的影响
DOI：
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
L. Kornblum
中科院分区：
文献类型：
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作者：
Shaked Caspi;Lishai Shoham;M. Baskin;K. Weinfeld;C. Piamonteze;K. Stoerzinger;L. Kornblum
从基础和应用的角度来看，相关电子氧化物的表面都引起了人们的极大兴趣。许多此类氧化物具有与本体特性不同的近表面区域（NSR）。 NSR 会显着影响材料电子结构的解释，特别是对于薄膜形式的材料，并对场效应器件和催化剂等应用产生不利影响。在这项工作中，我们研究了SrVO 3 (SVO)薄膜NSR的成分和电子结构的变化。我们采用 X 射线光电子能谱 (XPS) 并将 TiO x 封端的 SVO 薄膜与暴露在环境条件下的相同未封端的薄膜进行比较。裸膜中 SVO 表面的显着过度氧化（由主要 V 5+ 成分说明）被覆盖膜中的 TiO x 层防止。覆盖的膜进一步表现出Sr表面相的减少。这些结果证明了此类覆盖层在保留 NSR 中相关氧化物的整体特性方面的重要性和潜力，从而能够更准确地探测其基础物理特性，并为其集成到设备中提供一条途径。
Surfaces of correlated-electron oxides are of significant interest both from fundamental and applied perspectives. Many such oxides feature a near-surface region (NSR) which differs from the bulk’s properties. The NSR can significantly affect the interpretation of the material’s electronic structure, especially for those in thin film form, and have detrimental effects for applications such as field effect devices and catalysts. In this work we study the changes in the composition and electronic structure of the NSR of SrVO 3 (SVO) thin films. We employ x-ray photoelectron spectroscopy (XPS) and compare TiO x -capped SVO films to identical uncapped films that were exposed to ambient conditions. The significant over-oxidation of the SVO surface in the bare film, illustrated by a primary V 5+ component, is prevented by the TiO x layer in the capped film. The capped film further exhibits a decrease in Sr surface phases. These results demonstrate the importance and potential of such capping layers in preserving the bulk properties of correlated oxides in their NSR, enabling more accurate probes for their underlying physics and offering a route for their integration into devices.