High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures
High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures
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DOI：
10.1063/1.3575573
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发表时间：
2011-04-04
影响因子：
4
通讯作者：
Martin, Robert W.
中科院分区：
文献类型：
--
作者：
Bruckbauer, Jochen;Edwards, Paul R.;Martin, Robert W.
采用高空间分辨率阴极发光高光谱成像技术对InGaN/GaN多量子阱进行了研究。研究了mqw表面的沟槽状特征和v形坑的峰值发射能量和强度的变化。来自沟槽状特征内部区域的MQW发射红移约45 meV，比样品周围的平面区域更强烈，而来自v坑的发射蓝移约20 meV，相对较弱。通过将该技术应用于所研究的纳米结构，可以研究10纳米长度尺度上的能量和强度变化。(C) 2011年美国物理研究所。(doi: 10.1063/1.3575573)
InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575573]