Hopping in exponential bandtails in high electric fields and transport models in amorphous silicon
Hopping in exponential bandtails in high electric fields and transport models in amorphous silicon
复制标题
高电场中指数带尾的跳跃和非晶硅中的输运模型
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
J. Tauc
中科院分区：
文献类型：
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作者：
R. I. Devlen;H. Antoniadis;E. Schiff;J. Tauc
摘要本文计算了指数带尾态间过量载流子跳跃热化过程中的电输运。计算是基于一个典型的速率近似。对于smali电场的计算再现多重捕获色散，与先前的研究一致。对于高电场电输运成为非线性的，主要是由于电场诱导的色散参数的增加。该计算应对比最近的工作Esipov扩展带尾多重捕获，将隧道传输的边缘，在他的计算中，非线性传输设置在没有变化的色散。我们认为，这些结果区分跳跃和迁移率边缘模型的电子热化测量在a-Si：H。
Abstract A calculation of electrical transport during the thermalization of excess carrier hopping between states of an exponential bandtail is presented. The calculation is based on a typical rate approximation. For smali electric fields the calculation reproduces multiple-trapping dispersion, in agreement with prior research. For high electric fields electrical transport becomes nonlinear, primarily due to an electric-field-induced increase in the dispersion parameter. The calculation should be contrasted to recent work of Esipov which extended bandtail multiple-trapping to incorporate tunnelling to a transport edge; in his calculation nonlinear transport set in without changes in the dispersion. We suggest that these results discriminate between hopping and mobility-edge models for electron thermalization measurements in a-Si: H.