A Multi-Domain Magneto Tunnel Junction for Racetrack Nanowire Strips
A Multi-Domain Magneto Tunnel Junction for Racetrack Nanowire Strips
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DOI：
10.1109/tnano.2023.3298920
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发表时间：
2022-05
影响因子：
2.4
通讯作者：
Prayash Dutta;Albert Lee;Kang L. Wang;A. Jones;S. Bhanja
中科院分区：
文献类型：
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作者：
Prayash Dutta;Albert Lee;Kang L. Wang;A. Jones;S. Bhanja
畴壁存储器（DWM）具有SRAM级存取性能、低能量、高耐久性、高密度和CMOS兼容性。最近，移位可靠性和使用存储器的处理（PuM）提议开发了对DWM纳米线的一部分中的平行或反平行域的数目进行计数的需要。在这篇文章中，我们提出了一种多畴磁隧道结（MTJ），可以检测不同的电阻水平作为一个功能的数量的平行或反平行的域。使用详细的微磁模拟与LLG，我们展示了多域MTJ，研究其宏观尺寸的弹性工艺变化的好处，并提出了一个宏观模型，用于缩放的多域MTJ的大小。我们的结果表明，可扩展到七个域，同时保持16.3\，\text{mV}$感测裕度。
Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or anti-parallel domains in a portion of the DWM nanowire. In this article we propose a multi-domain magneto-tunnel junction (MTJ) that can detect different resistance levels as a function of a the number of parallel or anti-parallel domains. Using detailed micromagnetic simulation with LLG, we demonstrate the multi-domain MTJ, study the benefit of its macro-size on resilience to process variation and present a macro-model for scaling the size of the multi-domain MTJ. Our results indicate scalability to seven-domains while maintaining a $16.3 \,\text{mV}$ sense margin.