Enhancement of electrical and ferromagnetic properties by additional Al doping in Co:ZnO thin films
Enhancement of electrical and ferromagnetic properties by additional Al doping in Co:ZnO thin films
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DOI：
10.1088/0953-8984/19/29/296208
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发表时间：
2007-07
期刊：
影响因子：
--
通讯作者：
X. Liu;C. Song;F. Zeng;F. Pan
中科院分区：
文献类型：
--
作者：
X. Liu;C. Song;F. Zeng;F. Pan
系统地研究了射频磁控共溅射法制备的掺铝锌钴薄膜的几种性能。实验结果表明，Co2+稳定取代了纤锌矿晶格中的四面体配位的Zn2+，没有形成偏析的第二相，微量的Al掺杂对Co：ZnO薄膜的电学和磁学性能的提高有很大的影响。所有的薄膜都具有室温铁磁性，并且在Zn0.948Co0.05Al0.002O薄膜中获得了3.36μB/Co的巨磁矩。铁磁有序与结构缺陷密切相关。此外，在Co：ZnO薄膜中添加Al还可以实现禁带展宽和吸收边蓝移的现象。
Several properties of Al-doped Zn0.95Co0.05O thin films prepared by radio frequency (RF) magnetron co-sputtering have been systematically investigated. The experimental results indicate that Co2+ steadily substitutes for tetrahedrally coordinated Zn2+ in the ZnO wurtzite lattice without any segregated secondary phase formation, and that a trace amount of additional Al doping has a profound influence on the enhancement of electrical and magnetic properties of Co:ZnO films. All the films show room-temperature ferromagnetism, and a giant magnetic moment of 3.36 μB/Co is obtained in the Zn0.948Co0.05Al0.002O thin film. The ferromagnetic ordering is seen to be correlated with the structural defects. Moreover, a phenomenon of band gap broadening and absorption edge blueshift can be achieved by additional Al doping into the Co:ZnO films.